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相关产品
产品信息
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PF
Features
Type STFW3N150STP3N150STW3N150
■■■■■
V DSS 1500 V1500 V1500 V
R DS(on) max
< 9 Ω< 9 Ω< 9 Ω
I D
Pw
2.5 A63 W2.5 A140 W2.5 A140 W
100% avalanche tested
Intrinsic capacitances and Qg minimizedHigh speed switching
Fully isolated TO-3PF plastic packageCreepage distance path is 5.4 mm (typ.) for TO-3PF
Application
■
Switching applications
Description
Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the
company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.