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原装仙童5N60C N沟道600V/4.5A MOS场效应管开关管
型号/规格：
5N60C
品牌/商标：
FAIRCHILD（飞兆）
封装形式：
CER-DIP/陶瓷直插
环保类别：
无铅环保型
安装方式：
直插式
包装方式：
管装
功率特征：
大功率
相关产品
产品信息
QFET TM FQB5N60C / FQI5N60C 600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effecttransistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology. This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for high efficiency switched mode power supplies,active power factor correction, electronic lamp ballastsbased on half bridge topology.
Features
•4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V
•Low gate charge ( typical 15 nC)
•Low Crss ( typical 6.5 pF)
•Fast switching
•100% avalanche tested
• Improved dv/dt capabilit
General Description
These N-Channel enhancement mode power field effecttransistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology. This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for high efficiency switched mode power supplies,active power factor correction, electronic lamp ballastsbased on half bridge topology.
Features
•4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V
•Low gate charge ( typical 15 nC)
•Low Crss ( typical 6.5 pF)
•Fast switching
•100% avalanche tested
• Improved dv/dt capabilit